Crossbar ReRAM Memory can Store a Terabyte on a Postage-Stamp Sized Chip

In August 2013 Technologyreview.com announced that a class of non-volatile resistive random-access memory (ReRAM) developed by Wei Lu of the University of Michigan, and under development at Crossbar Inc. in Santa Clara, California, can store a terabyte of information on a postage-stamp sized CMOS compatible chip. Crossbar memory allows data storage at about 40 times the density of flash memory, and it is faster and more energy efficient.